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 TetraFET
D1007UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A K
B (2 pls) E
C 1
2
3
D 5 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH-PULL
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
G (4 pls)
F
H
J
I
M
N
* SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * USEFUL PO at 1 GHz * LOW NOISE
DK
PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 PIN 4 DRAIN 1 GATE 2
* HIGH GAIN - 13 dB MINIMUM
APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 100W 70V 20V 5A -65 to 150C 200C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/00
D1007UK
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 40W VDS = 28V f = 400MHz IDQ = 0.4A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 1 0.8 13 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70
Typ.
Max. Unit
V 1 1 7 mA
mA
V S dB % --
VGS(th) Gate Threshold Voltage *
TOTAL DEVICE
h
VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
PER SIDE
VDS = 28V VDS = 28V VDS = 28V 60 30 2.5 pF pF pF
* Pulse Test:
Pulse Duration = 300 ms , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj-case Thermal Resistance Junction - Case Max. 1.75C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/00
D1007UK
60 50 40
Pout W
80 70 60 50
% D r a in E ffic ie n c y
60 50 40
Pout W
18 16 14 12
f = 400M H z Id q = 0 .4 A Vds = 28V
G a in dB
30 20
f
30 20 10 0 0 6
10 0 0
= 400M H z Id q = 0 .4 A Vds = 28V
40 30 20
10 8
2
4
P in
6
W
8
10
Pout D r a in E ffic ie n c y
12
2
4
P in
6
W
8
10
Pout G a in
12
Figure 1 Power Output and efficiency vs. Power Input.
Figure 2 Power Output and Gain vs. Power Input.
0 -1 0 -2 0
IM D 3 dBc
OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz 400MHZ
f1 = f2 = Id q = Vds = 400M H z 4 0 0 .1 M H z 0 .4 A 28V
ZS
-3 0 -4 0 -5 0 -6 0 0
W
ZL
W
10.7 - j35.4
13.8 - j22.2
10
20
Pout
30
W PEP
40
IM D 3
50
60
Figure 3 IMD Vs. Output Power.
Typical S Parameters
! # !Freq !MHz 100 200 300 400 500 600 700 800 900 1000 VDS = 28V, IDQ = 1A MHZ S MA R 50 S11 mag 0.767 0.813 0.841 0.861 0.882 0.902 0.923 0.912 0.923 0.923 ang -135 -153 -161 -169 -175 180 174 170 164 161 S21 mag 22.646 10.116 5.623 3.548 2.820 2.093 1.365 1.096 0.902 0.724 ang 88 57 39 25 20 14 9 2 -3 -4 S12 mag 0.0155 0.0099 0.0076 0.0130 0.0210 0.0285 0.0376 0.0457 0.0484 0.0596 ang 9 4 49 79 78 78 77 66 66 64 S22 mag 0.531 0.692 0.794 0.841 0.875 0.910 0.944 0.944 0.933 0.944 ang -103 -131 -143 -151 -156 -161 -166 -170 -176 -177
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/00
D1007UK
L2 +28V 39
B IA S
100nF 30pF 10K 10K 620pF T2 T4
T6 T8
L1
30pF
100nF 10uF
620pF T10 1 -3 .5 p F OUTPUT
T1
D 1007U K 2 -1 8 p F T3 D 1007U K T9 620pF T7
IN P U T
2 -1 8 p F
620pF
T5
D1007UK TEST FIXTURE
Substrate 1.6mm FR4 All microstrip lines W = 2.5mm T1 T2, T3 T4, T5 T6, T7 T8, T9 T10 L1 L2 45mm 50 OHM UT34 semi-rigid coax 55mm 50 OHM UT 34 semi-rigid coax 25mm microstrip line 10mm microstrip line 45mm 25 OHM UT 34-25 semi-rigid coax 60mm 50OHM UT34 semi-rigid coax 4 turns 19swg enamelled copper wire, 7mm i.d. 2.5 turns of 19swg enamelled copper wire on T50-6 ferrite toroid
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/00


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